Orientation control of textured PZT thin films sputtered on silicon substrate with TiOx seeding

被引：72

作者：

Bouregba, R

Poullain, G

Vilquin, B

Murray, H

机构：

[1] Inst Sci Mat & Rayonnement, Lab CRISMAT, F-14050 Caen, France

[2] Univ Caen, CNRS, UMR 6508, F-14050 Caen, France

来源：

MATERIALS RESEARCH BULLETIN | 2000年 / 35卷 / 09期

关键词：

oxides; thin films; sputtering; X-ray diffraction; ferroelectricity;

D O I：

10.1016/S0025-5408(00)00354-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In situ deposition of Pb(Zr0.25Ti0.75)O-3 thin films by RF magnetron sputtering has been performed at 500 degreesC on Pt/Ti/SiO2/Si substrates without any postannealing treatment. The growth of PZT is ensured, provided that a thin TiOx layer is sputtered prior to PZT. Moreover, we find that sputtering Ti in a 100% argon atmosphere leads to highly (100) oriented films, while adding oxygen during sputtering of Ti leads to purely (111) oriented films. Electrical measurements performed on these films show remanent polarization P-r, coercive field E-c, and dielectric constant consistent with their Zr/Ti ratio. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

收藏

页码：1381 / 1390

页数：10

相关论文

共 22 条

[1] PZT THIN-FILM PREPARATION ON PT-TI ELECTRODE BY RF-SPUTTERING [J].

ABE, K ;

TOMITA, H ;

TOYODA, H ;

IMAI, M ;

YOKOTE, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (9B) :2152-2154

[2] DIELECTRIC-PROPERTIES OF (111)LEAD AND (100)LEAD ZIRCONATE-TITANATE FILMS PREPARED BY SOL-GEL TECHNIQUE [J].

AOKI, K ;

FUKUDA, Y ;

NUMATA, K ;

NISHIMURA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5155-5158

[3] EFFECTS OF TITANIUM BUFFER LAYER ON LEAD-ZIRCONATE-TITANATE CRYSTALLIZATION PROCESSES IN SOL-GEL DEPOSITION TECHNIQUE [J].

AOKI, K ;

FUKUDA, Y ;

NUMATA, K ;

NISHIMURA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (01) :192-195

[4] COMPARISON OF LEAD-ZIRCONATE-TITANATE THIN-FILMS ON RUTHENIUM OXIDE AND PLATINUM-ELECTRODES [J].

BURSILL, LA ;

REANEY, IM ;

VIJAY, DP ;

DESU, SB .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (03) :1521-1525

[5] POLYCRYSTALLINE LA0.5SR0.5COO3 PBZR0.53TI0.47O3 LA0.5SR0.5COO3 FERROELECTRIC CAPACITORS ON PLATINIZED SILICON WITH NO POLARIZATION FATIGUE [J].

DAT, R ;

LICHTENWALNER, DJ ;

AUCIELLO, O ;

KINGON, AI .

APPLIED PHYSICS LETTERS, 1994, 64 (20) :2673-2675

[6] FABRICATION AND PROPERTIES OF EPITAXIAL FERROELECTRIC HETEROSTRUCTURES WITH (SRRUO3) ISOTROPIC METALLIC OXIDE ELECTRODES [J].

EOM, CB ;

VANDOVER, RB ;

PHILLIPS, JM ;

WERDER, DJ ;

MARSHALL, JH ;

CHEN, CH ;

CAVA, RJ ;

FLEMING, RM ;

FORK, DK .

APPLIED PHYSICS LETTERS, 1993, 63 (18) :2570-2572

[7] AN EXPERIMENTAL 512-BIT NONVOLATILE MEMORY WITH FERROELECTRIC STORAGE CELL [J].

EVANS, JT ;

WOMACK, R .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1988, 23 (05) :1171-1175

[8] Single-crystal Pb(ZrxTi1-x)O-3 thin films prepared by metal-organic chemical vapor deposition: Systematic compositional variation of electronic and optical properties [J].

Foster, CM ;

Bai, GR ;

Csencsits, R ;

Vetrone, J ;

Jammy, R ;

Wills, LA ;

Carr, E ;

Amano, J .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (05) :2349-2357

[9] PREPARATION OF PB(ZR, TI)O3 THIN-FILMS BY MULTITARGET SPUTTERING [J].

HASE, T ;

SAKUMA, T ;

MIYASAKA, Y ;

HIRATA, K ;

HOSOKAWA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9B) :4061-4064

[10] Difference in microstructure between PZT thin films on Pt/Ti and those on Pt [J].

Hase, T ;

Sakuma, T ;

Amanuma, K ;

Mori, T ;

Ochi, A ;

Miyasaka, Y .

INTEGRATED FERROELECTRICS, 1995, 8 (1-2) :89-98