One-step growth of graphene-carbon nanotube hybrid materials by chemical vapor deposition

被引：170

作者：

Dong, Xiaochen ^{[4
,5
]}

Li, Bing ^{[3
]}

Wei, Ang ^{[4
,5
]}

Cao, Xiehong ^{[3
]}

Chan-Park, M. B. ^{[1
]}

Zhang, Hua ^{[3
]}

Li, Lain-Jong ^{[2
]}

Huang, Wei ^{[4
,5
]}

Chen, Peng ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Chem & Biomed Engn, Singapore 637459, Singapore

[2] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

[3] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[4] NUPT, KLOEID, Nanjing 210046, Peoples R China

[5] NUPT, IAM, Nanjing 210046, Peoples R China

来源：

CARBON | 2011年 / 49卷 / 09期

基金：

新加坡国家研究基金会; 美国国家科学基金会;

关键词：

SINGLE-LAYER GRAPHENE; CATALYST-FREE GROWTH; LARGE-AREA; FILMS; OXIDE; LONG;

D O I：

10.1016/j.carbon.2011.03.009

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Graphene-carbon nanotube (CNT) hybrid materials were synthesized by simple one-step chemical vapor deposition (CVD) using ethanol as precursor. On a copper foil decorated with silicon nanparticles (Si NPs), a graphene film grows uniformly on the substrate while CNTs sprout out from Si NPs to form a network on top. The density of CNTs can be controlled by the CVD growth temperature. As measured by scanning and transmission electron microscopy, the obtained CNTs exhibit bamboo-like multiple-wall structures. Electrical characterization shows that the graphene-CNT hybrids exhibit p-type field-effect characteristics and a significantly higher conductivity compared to a CVD grown pure graphene film. (C) 2011 Published by Elsevier Ltd.

引用

页码：2944 / 2949

页数：6

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