Nanocrystalline silicon film grown by LEPECVD for photovoltaic applications

被引:18
作者
Acciarri, M
Binetti, S
Bollani, M
Comotti, A
Fumagalli, L
Pizzini, S
von Känel, H
机构
[1] Univ Milan, INFM, Dept Mat Sci, Milan, Italy
[2] Politecn Milan, Dept Phys, Como, Italy
关键词
nanocrystalline; chemical vapour deposition; properties;
D O I
10.1016/j.solmat.2004.09.012
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
This work deals with the characterization of nanocrystalline (nc) silicon films, grown using the plasma enhanced chemical vapour deposition (PECVD) process based on a low-voltage high-current arc discharge plasma named LEPECVD (low-energy PECVD). The structural, electrical and chemical properties of the LEPECVD grown films have been studied as a function of the deposition parameters (substrate temperature, growth rate, silane dilution). The results show that the films consist of elongated nanocrystals along the < 111 > direction, embedded in an amorphous matrix. The crystallite size along the < 111 > direction is in the range of 9-20 nm. The volume fraction of crystallinity (chi(c)) varies between 51% and 78%, depending on preparation conditions. Conductivity values of the order of 10(-6) Omega(-1) cm(-1) for the layers were measured, making the material suitable for the p-i-n junction application. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:11 / 24
页数:14
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