Analysis of single event effects at grazing angle

被引：8

作者：

Campbell, AB ^{[1
]}

Musseau, O

Ferlet-Cavrois, V

Stapor, WJ

McDonald, PT

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] CEA, Bruyeres Le Chatel, France

[3] ICI, Mclean, VA USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1998年 / 45卷 / 03期

关键词：

D O I：

10.1109/23.685247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Investigation of single event effects at grazing angle by both charge collection and multiple bit upset measurements evidences modified collection mechanisms with charge transfer between adjacent reverse biased structures.

引用

页码：1603 / 1611

页数：9

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