Charge collection and SEU from angled ion strikes

被引：37

作者：

Dodd, PE ^{[1
]}

Shaneyfelt, MR ^{[1
]}

Sexton, FW ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1997年 / 44卷 / 06期

基金：

美国能源部;

关键词：

D O I：

10.1109/23.659044

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charge collection and SEU from angled ion strikes are studied using three-dimensional simulation. The physics of charge collection in unloaded diodes and transistors is explored, as is the angular dependence of upset threshold in CMOS SRAMs. The simulation results are compared to analytical models for charge collection. Modeling fundamental transport in SRAMs, the true effective LET relationship is computed and used to analyze experimental heavy-ion data. Impacts on SEU test methodology are discussed.

引用

收藏

页码：2256 / 2265

页数：10

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