Impact of technology trends on SEU in CMOS SRAMs

被引：87

作者：

Dodd, PE

Sexton, FW

Hash, GL

Shaneyfelt, MR

Draper, BL

Farino, AJ

Flores, RS

机构：

[1] Sandia National Laboratories, Albuquerque

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 06期

关键词：

D O I：

10.1109/23.556869

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impact of technology trends on the SEU hardness of epitaxial CMOS SRAMs is investigated using three-dimensional simulation. We study trends in SEU susceptibility with parameter variations across and within technology generations. Upset mechanisms for various strike locations and their dependence on gate-length scaling are explored. Such studies are useful for technology development and providing input for process and design decisions. An application of SEU simulation to the development of a 0.5-mu m radiation-hardened CMOS SRAM is presented.

引用

页码：2797 / 2804

页数：8

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