Integrated circuits are currently tested at accelerators for their susceptibility to single-event effects (SEE)'s. However, because of the cost and limited accessibility associated with accelerator testing, there is considerable interest in developing alternate testing methods. Two laboratory techniques for measuring SEE, one involving a pulsed laser and the other Cf-252, are described in detail in this paper. The pulsed laser provides information on the spatial and temporal dependence of SEE, information that has proven invaluable in understanding and mitigating SEE in spite of the differences in the physical mechanisms responsible for SEE induced by light and by ions. Considerable effort has been expended on developing Cf-252 as a laboratory test for SEE, but the technique has not found wide use because it is severely limited by the low energy and short range of the emitted ions that are unable to reach junctions either covered with dielectric layers or deep below the surface. In fact, there are documented cases where single-event latchup (SEL) testing with Cf-252 gave significantly different results from accelerator testing. A detailed comparison of laboratory and accelerator SEE data is presented in this review in order to establish the limits of each technique.