PROCESSING ENHANCED SEU TOLERANCE IN HIGH-DENSITY SRAMS

被引：7

作者：

FU, JS

LEE, KH

KOGA, R

KOLANSKI, WA

WEAVER, HT

BROWNING, JS

机构：

[1] AT&T BELL LABS,ALLENTOWN,PA 18103

[2] AEROSPACE CORP,EL SEGUNDO,CA 90245

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337473

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1322 / 1325

页数：4

共 10 条

[1] THE NATURAL RADIATION ENVIRONMENT INSIDE SPACECRAFT [J].

ADAMS, JH .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :2095-2100

[2] MECHANISMS LEADING TO SINGLE EVENT UPSET [J].

AXNESS, CL ;

WEAVER, HT ;

FU, JS ;

KOGA, R ;

KOLASINSKI, WA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1577-1580

[3] SOFT ERROR DEPENDENCE ON FEATURE SIZE [J].

BRUCKER, GJ ;

SMELTZER, R ;

KOLASINSKI, WA ;

KOGA, R .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1562-1564

[4] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J].

DZIEWIOR, J ;

SCHMID, W .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :346-348

[5] COMPARISON OF 2D MEMORY SEU TRANSPORT SIMULATION WITH EXPERIMENTS [J].

FU, JS ;

WEAVER, HT ;

KOGA, R ;

KOLASINSKI, WA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4145-4149

[6] RADIATION HARD 10 MU-M CMOS TECHNOLOGY [J].

LEE, KH ;

DESKO, JC ;

KOHLER, RA ;

LAWRENCE, CW ;

NAGY, WJ ;

SHIMER, JA ;

STEENWYK, SD ;

ANDERSON, RE ;

FU, JS .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1460-1463

[7] EFFECT OF CMOS MINIATURIZATION ON COSMIC-RAY-INDUCED ERROR RATE [J].

PICKEL, JC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :2049-2054

[8] SINGLE EVENT EFFECTS IN HIGH-DENSITY CMOS SRAMS [J].

SHIONO, N ;

SAKAGAWA, Y ;

SEKIGUCHI, M ;

SATO, K ;

SUGAI, I ;

HATTORI, T ;

HIRAO, Y .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1632-1636

[9]

Takeda E., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P542

[10] RAM CELL RECOVERY MECHANISMS FOLLOWING HIGH-ENERGY ION STRIKES [J].

WEAVER, HT ;

AXNESS, CL ;

FU, JS ;

BINKLEY, JS ;

MANSFIELD, J .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (01) :7-9

← 1 →