Atomic layer deposition growth of zirconium doped In2O3 films

被引：28

作者：

Asikainen, T ^{[1
]}

Ritala, M ^{[1
]}

Leskelä, M ^{[1
]}

机构：

[1] Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland

来源：

THIN SOLID FILMS | 2003年 / 440卷 / 1-2期

基金：

芬兰科学院;

关键词：

indium oxide; zirconium; deposition process;

D O I：

10.1016/S0040-6090(03)00822-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Zirconium doped indium oxide thin films were deposited by the atomic layer deposition technique at 500 degreesC using InCl3, ZrCl4 and water as precursors. The films were characterised by X-ray diffraction, energy dispersive X-ray analysis and by optical and electrical measurements. The films had polycrystalline In2O3 structure. High transparency and resistivity of 3.7 X 10(-4) Omega cm were obtained. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：152 / 154

页数：3

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