A multicolor quantum dot intersublevel detector with photoresponse in the terahertz range

被引：26

作者：

Huang, G. ^{[1
]}

Yang, J. ^{[1
]}

Bhattacharya, P. ^{[1
]}

Ariyawansa, G. ^{[2
]}

Perera, A. G. U. ^{[2
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2830994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An In0.4Ga0.6As/GaAs multi quantum-dot layer intersublevel detector with multicolor detection is demonstrated. The n-type doping in the dots is carefully adjusted during molecular beam epitaxy of the device heterostructure to control the dark current and the occupation of the dot states as a function of temperature. The device demonstrates several photoresponse peaks in the 3-13 and 20-55 mu m (15-5.4 THz) ranges. At 150 K, the response in the terahertz range has a peak responsivity of 0.05 A/W and specific detectivity D-* of 2x10(7) Jones for an applied bias of -2 V. (c) 2008 American Institute of Physics.

引用

页数：3

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