Electronic Junction Control in a Nanotube-Semiconductor Schottky Junction Solar Cell

被引：128

作者：

Wadhwa, Pooja ^{[1
]}

Liu, Bo ^{[1
]}

McCarthy, Mitchell A.

Wu, Zhuangchun ^{[1
]}

Rinzler, Andrew G. ^{[1
]}

机构：

[1] Univ Florida, Dept Phys, Gainesville, FL 32611 USA

来源：

NANO LETTERS | 2010年 / 10卷 / 12期

基金：

美国国家科学基金会;

关键词：

Schottky junction; solar cell; electronic gating; carbon nanotubes; crystalline silicon; MOLECULAR MONOLAYERS; SILICON; SURFACE; TRANSISTORS; FILMS;

D O I：

10.1021/nl103128a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We exploit the low density of electronic states in single wall carbon nanotubes to demonstrate active, electronic modulation of their Fermi level offset relative to n-type silicon in a nanotube-Si (metal-semiconductor) Schottky junction solar cell. Electronic modulation of the Fermi level offset, the junction interface dipole and a field developed across the depletion layer modifies the built-in potential in the device and its power generation characteristics. As produced (before modulation). devices exhibit similar to 8.5% power conversion efficiency (PCE). With active modulation the PCE is continuously and reversibly changed from 4 to 11 %.

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页码：5001 / 5005

页数：5

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