Raman spectra of epitaxial graphene on SiC(0001)

被引：302

作者：

Roehrl, J. ^{[1
]}

Hundhausen, M. ^{[1
]}

Emtsev, K. V. ^{[1
]}

Seyller, Th. ^{[1
]}

Graupner, R. ^{[1
]}

Ley, L. ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Lehrstuhl Tech Phys, D-91058 Erlangen, Germany

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 20期

关键词：

D O I：

10.1063/1.2929746

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present Raman spectra of epitaxial graphene layers grown on 6 root 3x6 root 3 reconstructed silicon carbide surfaces during annealing at elevated temperature. In contrast to exfoliated graphene a significant phonon hardening is observed. We ascribe that phonon hardening to a minor part to the known electron transfer from the substrate to the epitaxial layer, and mainly to mechanical strain that builds up when the sample is cooled down after annealing. Due to the larger thermal expansion coefficient of silicon carbide compared to the in-plane expansion coefficient of graphite this strain is compressive at room temperature. (C) 2008 American Institute of Physics.

引用

页数：3

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