Photoelectrochemical Properties of InxGa1-xN/GaN Multiquantum Well Structures in Depletion Layers

被引：14

作者：

Fujii, Katsushi ^{[1
,2
]}

Nakamura, Shinichiro ^{[3
]}

Yokojima, Satoshi ^{[3
,4
]}

Goto, Takenari ^{[2
]}

Yao, Takafumi ^{[2
]}

Sugiyama, Masakazu ^{[5
]}

Nakano, Yoshiaki ^{[1
,5
]}

机构：

[1] Univ Tokyo, Res Ctr Adv Sci & Technol, Meguro Ku, Tokyo 1538904, Japan

[2] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan

[3] RIKEN, Nakamura Lab, Wako, Saitama 3510198, Japan

[4] Tokyo Univ Pharm & Life Sci, Sch Pharm, Hachioji, Tokyo 1920392, Japan

[5] Univ Tokyo, Sch Engn, Bunkyo Ku, Tokyo, Japan

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2011年 / 115卷 / 50期

关键词：

HOT-CARRIER INJECTION; QUANTUM-WELLS; GAN;

D O I：

10.1021/jp2088324

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Photoelectrochemical conversion from light to chemical energy is one of the most promising candidates for renewable energy generation. The most crucial of the many serious problems to be solved for this conversion is the slow carrier transfer at the semiconductor-electrolyte interface. We propose one of solutions using quantum wells, and in the work reported here we evaluated the electrochemical and photoelectrochemical properties of InxGa1-xN/GaN multi quantum well (MQW) structures in the depletion layer. The structures were grown by conventional metal-organic vapor phase epitaxy on (0001) sapphire substrates. Their electrochemical and photoelectrochemical properties differ from those of the bulk materials.

引用

页码：25165 / 25169

页数：5

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