Universal bandgap bowing in group-III nitride alloys

被引：99

作者：

Wu, J

Walukiewicz, W

Yu, KM

Ager, JW

Li, SX

Haller, EE

Lu, H

Schaff, WJ

机构：

[1] Lawrence Berkeley Natl Lab, Div Sci Mat, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Appl Sci & Technol Grad Grp, Berkeley, CA 94720 USA

[3] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[4] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

SOLID STATE COMMUNICATIONS | 2003年 / 127卷 / 06期

基金：

美国国家科学基金会;

关键词：

semiconductors; optical properties; light absorption and reflection; OPTICAL-PROPERTIES; GAP; INN; GROWTH; ENERGY; ALN;

D O I：

10.1016/S0038-1098(03)00457-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The energy gaps of molecular-beam-epitaxy grown wurtzite-structure In1-xAlxN alloys with x less than or equal to 0.25 have been measured by absorption and photoluminescence experiments. The results are consistent with the recent discovery of a narrow bandgap of similar to0.7 eV for InN. A bowing parameter of 3 eV was determined from the composition dependence of these bandgaps. Combined with previously reported data of InGaN and GaAlN, these results show a universal relationship between the bandgap variations of group-III nitride alloys and their compositions. Published by Elsevier Ltd.

引用

页码：411 / 414

页数：4

共 21 条

[1] Optical constants of epitaxial AlGaN films and their temperature dependence [J].