InGaN-based blue light-emitting diodes and laser diodes

被引：83

作者：

Nakamura, S ^{[1
]}

机构：

[1] Nichia Chem Ind Ltd, R&D Dept, Tokushima 774, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

InGaN; quantum-well structure; blue LED; blue laser diode; epitaxially laterally overgrown GaN; leakage current;

D O I：

10.1016/S0022-0248(98)01344-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InGaN single-quantum-well-structure blue light-emitting diodes (LEDs) were grown on epitaxially laterally overgrown GaN (ELOG) and sapphire substrates. The emission spectra showed a similar blueshift with increasing forward currents between both LEDs. The LED on sapphire had a considerable amount of leakage current in comparison with that on ELOG. InGaN multi-quantum-well structure laser diodes with modulation-doped strained-layer superlattice cladding layers fabricated on the ELOG substrate were demonstrated to have a lifetime of more than 8000 h. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：290 / 295

页数：6

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