Near band-edge transitions in AlN thin films grown on different substrates

被引：21

作者：

Teofilov, N

Thonke, K ^{[1
]}

Sauer, R

Ebling, DG

Kirste, L

Benz, KW

机构：

[1] Univ Ulm, Abt Halbleiterphys, D-89069 Ulm, Germany

[2] Univ Freiburg, Freiburger Mat Forschungszentrum, D-79104 Freiburg, Germany

来源：

关键词：

aluminum nitride; epitaxial films; excitons; cathodoluminescence;

D O I：

10.1016/S0925-9635(00)00598-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical properties of epitaxial aluminum nitride (AlN) films grown on sapphire, SiC, and Si substrates have been investigated in the (2-6.3) eV photon energy range using cathodoluminescence (CL) at liquid nitrogen temperature. Besides a broad luminescence band at 3.2 eV the CL spectra shows multiple, relatively narrow excitonic features in the near band-edge region at approximately 6.1 eV. The nature of the excitonic transitions is discussed and an estimate of the band-gap energy is given. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1300 / 1303

页数：4

共 15 条

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