Bistable operation of a two-section 1.3-μm InAs quantum dot laser -: Absorption saturation and the quantum confined Stark effect

被引:69
作者
Huang, XD [1 ]
Stintz, A [1 ]
Li, H [1 ]
Rice, A [1 ]
Liu, GT [1 ]
Lester, LF [1 ]
Cheng, J [1 ]
Malloy, KJ [1 ]
机构
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
关键词
absorption saturation; electroabsorption; hysteresis; optical bistability; quantum confined Stark effect; quantum-dot lasers; quantum dots; saturable absorber; semiconductor laser;
D O I
10.1109/3.910451
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Room temperature, continuous-wave bistability was observed in oxide-confined, two-section, 1.3-mum quantum-dot (QD) lasers with an integrated intracavity quantum-dot saturable absorber. The origin of the hysteresis and bistability were shown to be due to the nonlinear saturation of the QD absorption and the electroabsorption induced by the quantum confined Stark effect.
引用
收藏
页码:414 / 417
页数:4
相关论文
共 19 条
[1]   HYDROLYZATION OXIDATION OF ALXGA1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURES AND SUPERLATTICES [J].
DALLESASSE, JM ;
HOLONYAK, N ;
SUGG, AR ;
RICHARD, TA ;
ELZEIN, N .
APPLIED PHYSICS LETTERS, 1990, 57 (26) :2844-2846
[2]   Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots [J].
Fry, PW ;
Itskevich, IE ;
Mowbray, DJ ;
Skolnick, MS ;
Finley, JJ ;
Barker, JA ;
O'Reilly, EP ;
Wilson, LR ;
Larkin, IA ;
Maksym, PA ;
Hopkinson, M ;
Al-Khafaji, M ;
David, JPR ;
Cullis, AG ;
Hill, G ;
Clark, JC .
PHYSICAL REVIEW LETTERS, 2000, 84 (04) :733-736
[3]   30 GHz bandwidth, 1.55 mu m MQW-DFB laser diode based on a new modulation scheme [J].
Goutain, E ;
Renaud, JC ;
Krakowski, M ;
Rondi, D ;
Blondeau, R ;
Decoster, D .
ELECTRONICS LETTERS, 1996, 32 (10) :896-897
[4]   Electric-field effects on excitons in quantum dots [J].
Heller, W ;
Bockelmann, U ;
Abstreiter, G .
PHYSICAL REVIEW B, 1998, 57 (11) :6270-6273
[5]   Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers [J].
Huang, XD ;
Stintz, A ;
Hains, CP ;
Liu, GT ;
Cheng, J ;
Malloy, KJ .
ELECTRONICS LETTERS, 2000, 36 (01) :41-42
[6]   Bistable laser diodes and their applications: State of the art [J].
Kawaguchi, H .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (05) :1254-1270
[7]   PROGRESS IN OPTICAL FUNCTIONAL DEVICES USING 2-SECTION LASER-DIODES AMPLIFIERS [J].
KAWAGUCHI, H .
IEE PROCEEDINGS-J OPTOELECTRONICS, 1993, 140 (01) :3-15
[8]   Optical characteristics of 1.24-μm InAs quantum-dot laser diodes [J].
Lester, LF ;
Stintz, A ;
Li, H ;
Newell, TC ;
Pease, EA ;
Fuchs, BA ;
Malloy, KJ .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (08) :931-933
[9]   Low-temperature near-field nonlinear absorption spectroscopy of InGaAs single quantum dots [J].
Matsumoto, T ;
Ohtsu, M ;
Matsuda, K ;
Saiki, T ;
Saito, H ;
Nishi, K .
APPLIED PHYSICS LETTERS, 1999, 75 (21) :3246-3248
[10]   Measurements of reverse and forward bias absorption and gain spectra in semiconductor laser material [J].
McDougall, SD ;
Ironside, CN .
ELECTRONICS LETTERS, 1995, 31 (25) :2179-2181