Low-temperature formation of perovskite PbTiO3 films by O2 cluster ion-assisted deposition

被引：6

作者：

Akizuki, M

Matsuo, J

Qin, W

Aoki, T

Harada, M

Ogasawara, S

Yodoshi, K

Yamada, I ^{[1
]}

机构：

[1] Kyoto Univ, Ion Beam Engn Expt Lab, Sakyo Ku, Kyoto 60601, Japan

[2] Sanyo Elect Co Ltd, Ctr Microelect Res, Gifu 50301, Japan

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1998年 / 54卷 / 1-3期

关键词：

gas cluster ion; perovskite films; oxygen;

D O I：

10.1016/S0254-0584(98)00100-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation of PbTiO3 films on Pt films using O-2 cluster ions, Pb and Ti(i-OC3H7)(4), was examined. Perovskite-PbTiO3 films could be formed at a substrate temperature of 400 degrees C, which was about 100 degrees C lower than that which is possible with CVD and sol-gel methods. An acceleration energy of 1 keV was sufficient to form the perovskite structure. These films were obtained owing to a high oxidant Aux to the surface and high-density energy deposition during growth. Another feature of the O-2 cluster ion assisted deposition was that no pyrochlore structure was observed at lower substrate temperatures. This might be due to surface reactions in the high vacuum (3 X 10(-5) Torr). (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：255 / 257

页数：3

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