Comparison of Cu electromigration lifetime in Cu interconnects coated with various caps

被引：97

作者：

Hu, CK

Gignac, L

Liniger, E

Herbst, B

Rath, DL

Chen, ST

Kaldor, S

Simon, A

Tseng, WT

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] IBM Corp, Microelect Div, Hopewell Jct, NY 12533 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 05期

关键词：

D O I：

10.1063/1.1596375

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electromigration in Cu Damascene lines with bamboo-like grain structures, either capped with Ta/TaN, SiNx, SiCxNyHz layers, or without any cap, was investigated. A thin Ta/TaN cap on top of the Cu line surface significantly improves electromigration lifetime when compared with lines without a cap and with lines capped with SiNx or SiCxNyHz. The activation energy for electromigration increased from 0.87 eV for lines without a cap to 1.0-1.1 eV for samples with SiNx or SiCxNyHz caps and to 1.4 eV for Ta/TaN capped samples. (C) 2003 American Institute of Physics.

引用

页码：869 / 871

页数：3

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