Thermal stability of 2H-implanted n- and p-type GaN

Implantation of H-2(+) into n- and p- type GaN creates high resistivity material in which the resistance displays activation energies of 0.8 and 0.9 eV, respectively. Annealing at 500 degrees C restores the initial, preimplanted resistance of the n- GaN, due to removal of the deep trap states created by the ion stopping. By contrast, in p- type GaN annealing at 500 degrees C produces motion of the implanted deuterium and formation of Mg-H complexes that keep the resistance high. About 20% of the deuterium remains in n- GaN even after annealing at 1200 degrees C, where it decorates the residual implant damage. In p- type GaN all of the deuterium is evolved from the crystal by 1000 degrees C. (C) 1998 American Institute of Physics. [S0003-6951(98)03839- X].