H-ATOM INCORPORATION IN MG-DOPED GAN GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：42

作者：

OHBA, Y

HATANO, A

机构：

[1] Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki, 210

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 10A期

关键词：

METALORGANIC CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; MAGNESIUM DOPING; HYDROGEN IN SEMICONDUCTORS; SECONDARY ION MASS SPECTROSCOPY;

D O I：

10.1143/JJAP.33.L1367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

H-atom incorporation was studied for Mg-doped GaN grown by metalorganic chemical vapor deposition. H-atom incorporation was found to increase linearly with Mg concentration, suggesting the formation of simple complex between Mg and H atoms in GaN. Decrease of H-atom concentration was observed after thermal treatment in Ar, supporting the hypothesis that H-atom extraction plays an important role in obtaining low-resistivity p-type conduction.

引用

页码：L1367 / L1369

页数：3

共 10 条

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