The vacancy-nitrogen-hydrogen complex in diamond: a potential deep centre in chemical vapour deposited material

被引:35
作者
Goss, JP [1 ]
Briddon, PR
Jones, R
Sque, S
机构
[1] Newcastle Univ, Sch Nat Sci, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
[2] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England
关键词
D O I
10.1088/0953-8984/15/39/014
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Following recent experiments leading to the assignment of a trigonal vacancy-nitrogen-hydrogen complex in single-crystal chemical vapour deposited diamond, we have employed first-principles density functional supercell and cluster techniques to examine the structure and properties of such a defect. We find that the trigonal defect where H bonds directly to the nitrogen atom is unstable and instead a planar structure with H bonding to carbon is the ground state. The complex is expected to be thermally stable as well as optically, magnetically and electrically active. We also discuss the dynamic properties of the complex, and tentatively propose a trigonal form of the defect made up from a superposition of the three equivalent C-1h configurations.
引用
收藏
页码:S2903 / S2911
页数:9
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