Theoretical study of sulfur-hydrogen-vacancy complex in diamond

被引：17

作者：

Miyazaki, T

Okushi, H

Uda, T

机构：

[1] Agcy Ind Sci & Technol, Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, Japan

[2] Joint Res Ctr Atom Technol, Angstrom Technol Partnership, Tsukuba, Ibaraki 3050045, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 25期

关键词：

D O I：

10.1063/1.1381041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present an ab initio study of sulfur (S)-hydrogen (H)-vacancy (V) complexes in diamond. An S-H-V defect may become a much shallower donor than an isolated substitutional S defect when S in the complex is either three or five connected. Upon annealing the S-doped crystal, preferential formation of other deep-level defects would deactivate the shallow S-complex donors. (C) 2001 American Institute of Physics.

引用

页码：3977 / 3979

页数：3

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