The origin of blue and ultraviolet emission from porous GaP

被引：26

作者：

Meijerink, A

Bol, AA

Kelly, JJ

机构：

[1] Debye Institute, Department of Condensed Matter, University Utrecht, 3508 TA Utrecht

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 19期

关键词：

D O I：

10.1063/1.116848

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The luminescence properties of porous n-type GaP are reported. Apart from the orange emission of bulk GaP, emissions in the blue and ultraviolet are observed. Evidence is presented to show that this blueshifted emission is not due to quantum confinement effects, as previously suggested, but to gallium oxide on the surface of the porous material. (C) 1996 American Institute of Physics.

引用

收藏

页码：2801 / 2803

页数：3

相关论文

共 22 条

[1] Semiconductor clusters, nanocrystals, and quantum dots [J].

Alivisatos, AP .

SCIENCE, 1996, 271 (5251) :933-937

[2] TIME-RESOLVED BLUE AND ULTRAVIOLET PHOTOLUMINESCENCE IN POROUS GAP [J].

ANEDDA, A ;

SERPI, A ;

KARAVANSKII, VA ;

TIGINYANU, IM ;

ICHIZLI, VM .

APPLIED PHYSICS LETTERS, 1995, 67 (22) :3316-3318

[3] OBSERVATIONS ON LUMINESCENCE OF SOME OXIDES CONTAINING POST-TRANSITION METAL IONS [J].

BLASSE, G ;

BRIL, A .

MATERIALS RESEARCH BULLETIN, 1970, 5 (04) :231-&

[4] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].

CANHAM, LT .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048

[5] SiOx luminescence from light-emitting porous silicon: Support for the quantum confinement luminescence center model [J].

Cooke, DW ;

Bennett, BL ;

Farnum, EH ;

Hults, WL ;

Sickafus, KE ;

Smith, JF ;

Smith, JL ;

Taylor, TN ;

Tiwari, P ;

Portis, AM .

APPLIED PHYSICS LETTERS, 1996, 68 (12) :1663-1665

[6] INTERIMPURITY RECOMBINATIONS INVOLVING ISOELECTRONIC TRAP BISMUTH IN GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

CUTHBERT, JD ;

LYNCH, RT .

PHYSICAL REVIEW, 1969, 179 (03) :754-&

[7]

EKIMOV AI, 1982, SOV PHYS SEMICOND+, V16, P775

[8] ELECTROCHEMICAL SECTIONING AND SURFACE FINISHING OF GAAS AND GASB [J].

ELLIOTT, CR ;

REGNAULT, JC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1557-1562

[9]

EREN BH, 1995, ADV MATER, V7, P739

[10] Morphology and strongly enhanced photoresponse of GaP electrodes made porous by anodic etching [J].

Erne, BH ;

Vanmaekelbergh, D ;

Kelly, JJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (01) :305-314