Vacuum-annealed Cu contacts for graphene electronics

被引：35

作者：

Malec, C. E. ^{[1
]}

Elkus, B. ^{[1
]}

Davidovic, D. ^{[1
]}

机构：

[1] Georgia Tech Phys Dept, Atlanta, GA USA

来源：

SOLID STATE COMMUNICATIONS | 2011年 / 151卷 / 23期

关键词：

Graphene; Annealing; Contact resistance; Transfer length method;

D O I：

10.1016/j.ssc.2011.08.025

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present transfer length method measurements of the contact resistance between Cu and graphene, and a method to significantly reduce the contact resistance by vacuum annealing. Even in samples with heavily contaminated contacts, the contacts display very low contact resistance post annealing. Due to the common use of Cu, and its low chemical reactivity with graphene, thermal annealing will be important for future graphene devices requiring non-perturbing contacts with low contact resistance. (C) 2011 Elsevier Ltd. All rights reserved.

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页码：1791 / 1793

页数：3

相关论文

共 12 条

[1] Effects of Metallic Contacts on Electron Transport through Graphene [J].

Barraza-Lopez, Salvador ;

Vanevic, Mihajlo ;

Kindermann, Markus ;

Chou, M. Y. .

PHYSICAL REVIEW LETTERS, 2010, 104 (07)

[2] MODELS FOR CONTACTS TO PLANAR DEVICES [J].

BERGER, HH .

SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&

[3] Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point [J].

Blake, P. ;

Yang, R. ;

Morozov, S. V. ;

Schedin, F. ;

Ponomarenko, L. A. ;

Zhukov, A. A. ;

Nair, R. R. ;

Grigorieva, I. V. ;

Novoselov, K. S. ;

Geim, A. K. .

SOLID STATE COMMUNICATIONS, 2009, 149 (27-28) :1068-1071

[4] Raman spectroscopy of graphene and graphite: Disorder, electron-phonon coupling, doping and nonadiabatic effects [J].

Ferrari, Andrea C. .

SOLID STATE COMMUNICATIONS, 2007, 143 (1-2) :47-57

[5] Doping graphene with metal contacts [J].

Giovannetti, G. ;

Khomyakov, P. A. ;

Brocks, G. ;

Karpan, V. M. ;

van den Brink, J. ;

Kelly, P. J. .

PHYSICAL REVIEW LETTERS, 2008, 101 (02)

[6] Evidence of the role of contacts on the observed electron-hole asymmetry in graphene [J].

Huard, B. ;

Stander, N. ;

Sulpizio, J. A. ;

Goldhaber-Gordon, D. .

PHYSICAL REVIEW B, 2008, 78 (12)

[7] First-principles study of the interaction and charge transfer between graphene and metals [J].

Khomyakov, P. A. ;

Giovannetti, G. ;

Rusu, P. C. ;

Brocks, G. ;

van den Brink, J. ;

Kelly, P. J. .

PHYSICAL REVIEW B, 2009, 79 (19)

[8] Contact and edge effects in graphene devices [J].

Lee, Eduardo J. H. ;

Balasubramanian, Kannan ;

Weitz, Ralf Thomas ;

Burghard, Marko ;

Kern, Klaus .

NATURE NANOTECHNOLOGY, 2008, 3 (08) :486-490

[9]

Nagashio K, 2009, INT EL DEVICES MEET, P527

[10] Electric field effect in atomically thin carbon films [J].

Novoselov, KS ;

Geim, AK ;

Morozov, SV ;

Jiang, D ;

Zhang, Y ;

Dubonos, SV ;

Grigorieva, IV ;

Firsov, AA .

SCIENCE, 2004, 306 (5696) :666-669