共 33 条
Effects of Metallic Contacts on Electron Transport through Graphene
被引:134
作者:

Barraza-Lopez, Salvador
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Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Vanevic, Mihajlo
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Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Kindermann, Markus
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Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Chou, M. Y.
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Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
机构:
[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[2] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands
基金:
美国国家科学基金会;
关键词:
DEVICES;
D O I:
10.1103/PhysRevLett.104.076807
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
We report on a first-principles study of the conductance through graphene suspended between Al contacts as a function of junction length, width, and orientation. The charge transfer at the leads and into the freestanding section gives rise to an electron-hole asymmetry in the conductance and in sufficiently long junctions induces two conductance minima at the energies of the Dirac points for suspended and clamped regions, respectively. We obtain the potential profile along a junction caused by doping and provide parameters for effective model calculations of the junction conductance with weakly interacting metallic leads.
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共 33 条
[1]
Carbon-based electronics
[J].
Avouris, Phaedon
;
Chen, Zhihong
;
Perebeinos, Vasili
.
NATURE NANOTECHNOLOGY,
2007, 2 (10)
:605-615

Avouris, Phaedon
论文数: 0 引用数: 0
h-index: 0
机构:
IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

Chen, Zhihong
论文数: 0 引用数: 0
h-index: 0
机构:
IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

Perebeinos, Vasili
论文数: 0 引用数: 0
h-index: 0
机构:
IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2]
Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
[J].
Berger, C
;
Song, ZM
;
Li, TB
;
Li, XB
;
Ogbazghi, AY
;
Feng, R
;
Dai, ZT
;
Marchenkov, AN
;
Conrad, EH
;
First, PN
;
de Heer, WA
.
JOURNAL OF PHYSICAL CHEMISTRY B,
2004, 108 (52)
:19912-19916

Berger, C
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Song, ZM
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Li, TB
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Li, XB
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Ogbazghi, AY
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Feng, R
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Dai, ZT
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Marchenkov, AN
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Conrad, EH
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

First, PN
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

de Heer, WA
论文数: 0 引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[3]
Electronic confinement and coherence in patterned epitaxial graphene
[J].
Berger, Claire
;
Song, Zhimin
;
Li, Xuebin
;
Wu, Xiaosong
;
Brown, Nate
;
Naud, Cecile
;
Mayou, Didier
;
Li, Tianbo
;
Hass, Joanna
;
Marchenkov, Atexei N.
;
Conrad, Edward H.
;
First, Phillip N.
;
de Heer, Wait A.
.
SCIENCE,
2006, 312 (5777)
:1191-1196

Berger, Claire
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Song, Zhimin
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Li, Xuebin
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Wu, Xiaosong
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Brown, Nate
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Naud, Cecile
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Mayou, Didier
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Li, Tianbo
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Hass, Joanna
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Marchenkov, Atexei N.
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

Conrad, Edward H.
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

First, Phillip N.
论文数: 0 引用数: 0
h-index: 0
机构: Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

de Heer, Wait A.
论文数: 0 引用数: 0
h-index: 0
机构:
Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA
[4]
Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point
[J].
Blake, P.
;
Yang, R.
;
Morozov, S. V.
;
Schedin, F.
;
Ponomarenko, L. A.
;
Zhukov, A. A.
;
Nair, R. R.
;
Grigorieva, I. V.
;
Novoselov, K. S.
;
Geim, A. K.
.
SOLID STATE COMMUNICATIONS,
2009, 149 (27-28)
:1068-1071

Blake, P.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Yang, R.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Morozov, S. V.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Schedin, F.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Ponomarenko, L. A.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Zhukov, A. A.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Nair, R. R.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Grigorieva, I. V.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Novoselov, K. S.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

Geim, A. K.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England
[5]
Transport through normal-metal-graphene contacts
[J].
Blanter, Ya. M.
;
Martin, Ivar
.
PHYSICAL REVIEW B,
2007, 76 (15)

Blanter, Ya. M.
论文数: 0 引用数: 0
h-index: 0
机构:
Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

Martin, Ivar
论文数: 0 引用数: 0
h-index: 0
机构:
Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87544 USA Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands
[6]
The electronic properties of graphene
[J].
Castro Neto, A. H.
;
Guinea, F.
;
Peres, N. M. R.
;
Novoselov, K. S.
;
Geim, A. K.
.
REVIEWS OF MODERN PHYSICS,
2009, 81 (01)
:109-162

Castro Neto, A. H.
论文数: 0 引用数: 0
h-index: 0
机构:
Boston Univ, Dept Phys, Boston, MA 02215 USA Boston Univ, Dept Phys, Boston, MA 02215 USA

Guinea, F.
论文数: 0 引用数: 0
h-index: 0
机构:
CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain Boston Univ, Dept Phys, Boston, MA 02215 USA

Peres, N. M. R.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Minho, Ctr Phys, P-4710057 Braga, Portugal Boston Univ, Dept Phys, Boston, MA 02215 USA

Novoselov, K. S.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Dept Phys & Astron, Manchester M13 9PL, Lancs, England Boston Univ, Dept Phys, Boston, MA 02215 USA

Geim, A. K.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Dept Phys & Astron, Manchester M13 9PL, Lancs, England Boston Univ, Dept Phys, Boston, MA 02215 USA
[7]
Shot noise in ballistic graphene
[J].
Danneau, R.
;
Wu, F.
;
Craciun, M. F.
;
Russo, S.
;
Tomi, M. Y.
;
Salmilehto, J.
;
Morpurgo, A. F.
;
Hakonen, P. J.
.
PHYSICAL REVIEW LETTERS,
2008, 100 (19)

Danneau, R.
论文数: 0 引用数: 0
h-index: 0
机构:
Helsinki Univ Technol, Low Temp Lab, FIN-02150 Espoo, Finland Helsinki Univ Technol, Low Temp Lab, FIN-02150 Espoo, Finland

Wu, F.
论文数: 0 引用数: 0
h-index: 0
机构:
Helsinki Univ Technol, Low Temp Lab, FIN-02150 Espoo, Finland Helsinki Univ Technol, Low Temp Lab, FIN-02150 Espoo, Finland

Craciun, M. F.
论文数: 0 引用数: 0
h-index: 0
机构:
Delft Univ Technol, Kavli Inst Nanosci, Delft, Netherlands Helsinki Univ Technol, Low Temp Lab, FIN-02150 Espoo, Finland

Russo, S.
论文数: 0 引用数: 0
h-index: 0
机构:
Delft Univ Technol, Kavli Inst Nanosci, Delft, Netherlands Helsinki Univ Technol, Low Temp Lab, FIN-02150 Espoo, Finland

Tomi, M. Y.
论文数: 0 引用数: 0
h-index: 0
机构:
Helsinki Univ Technol, Low Temp Lab, FIN-02150 Espoo, Finland Helsinki Univ Technol, Low Temp Lab, FIN-02150 Espoo, Finland

Salmilehto, J.
论文数: 0 引用数: 0
h-index: 0
机构:
Helsinki Univ Technol, Low Temp Lab, FIN-02150 Espoo, Finland Helsinki Univ Technol, Low Temp Lab, FIN-02150 Espoo, Finland

Morpurgo, A. F.
论文数: 0 引用数: 0
h-index: 0
机构:
Delft Univ Technol, Kavli Inst Nanosci, Delft, Netherlands Helsinki Univ Technol, Low Temp Lab, FIN-02150 Espoo, Finland

Hakonen, P. J.
论文数: 0 引用数: 0
h-index: 0
机构:
Helsinki Univ Technol, Low Temp Lab, FIN-02150 Espoo, Finland Helsinki Univ Technol, Low Temp Lab, FIN-02150 Espoo, Finland
[8]
Behavior of a chemically doped graphene junction
[J].
Farmer, Damon B.
;
Lin, Yu-Ming
;
Afzali-Ardakani, Ali
;
Avouris, Phaedon
.
APPLIED PHYSICS LETTERS,
2009, 94 (21)

Farmer, Damon B.
论文数: 0 引用数: 0
h-index: 0
机构:
IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

Lin, Yu-Ming
论文数: 0 引用数: 0
h-index: 0
机构:
IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

Afzali-Ardakani, Ali
论文数: 0 引用数: 0
h-index: 0
机构:
IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

Avouris, Phaedon
论文数: 0 引用数: 0
h-index: 0
机构:
IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[9]
Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices
[J].
Farmer, Damon B.
;
Golizadeh-Mojarad, Roksana
;
Perebeinos, Vasili
;
Lin, Yu-Ming
;
Tulevski, George S.
;
Tsang, James C.
;
Avouris, Phaedon
.
NANO LETTERS,
2009, 9 (01)
:388-392

Farmer, Damon B.
论文数: 0 引用数: 0
h-index: 0
机构:
IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

Golizadeh-Mojarad, Roksana
论文数: 0 引用数: 0
h-index: 0
机构:
Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47906 USA IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

Perebeinos, Vasili
论文数: 0 引用数: 0
h-index: 0
机构:
IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

Lin, Yu-Ming
论文数: 0 引用数: 0
h-index: 0
机构:
IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

Tulevski, George S.
论文数: 0 引用数: 0
h-index: 0
机构:
IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

Tsang, James C.
论文数: 0 引用数: 0
h-index: 0
机构:
IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

Avouris, Phaedon
论文数: 0 引用数: 0
h-index: 0
机构:
IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
[10]
Graphene: Status and Prospects
[J].
Geim, A. K.
.
SCIENCE,
2009, 324 (5934)
:1530-1534

Geim, A. K.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England