Transparent conductive graphene electrode in GaN-based ultra-violet light emitting diodes

被引：35

作者：

Kim, Byung-Jae ^{[1
]}

Mastro, Michael A. ^{[2
]}

Hite, Jennifer ^{[2
]}

Eddy, Charles R., Jr. ^{[2
]}

Kim, Jihyun ^{[1
]}

机构：

[1] Korea Univ, Dept Chem & Biol Engn, Seoul 136713, South Korea

[2] USN, Res Lab, Washington, DC 20375 USA

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 22期

关键词：

Graphite electrodes - Transparent electrodes - III-V semiconductors - Light emitting diodes - Gallium nitride;

D O I：

10.1364/OE.18.023030

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report a graphene-based transparent conductive electrode for use in ultraviolet (UV) GaN light emitting diodes (LEDs). A few-layer graphene (FLG) layer was mechanically deposited. UV light at a peak wavelength of 368nm was successfully emitted by the FLG layer as transparent contact to p-GaN. The emission of UV light through the thin graphene layer was brighter than through the thick graphene layer. The thickness of the graphene layer was characterized by micro-Raman spectroscopy. Our results indicate that this novel graphene-based transparent conductive electrode holds great promise for use in UV optoelectronics for which conventional ITO is less transparent than graphene. (C) 2010 Optical Society of America

引用

页码：23030 / 23034

页数：5

共 17 条

[1] Superior thermal conductivity of single-layer graphene [J].

Balandin, Alexander A. ;

Ghosh, Suchismita ;

Bao, Wenzhong ;

Calizo, Irene ;

Teweldebrhan, Desalegne ;

Miao, Feng ;

Lau, Chun Ning .

NANO LETTERS, 2008, 8 (03) :902-907

[2] Perspectives on Carbon Nanotubes and Graphene Raman Spectroscopy [J].

Dresselhaus, Mildred S. ;

Jorio, Ado ;

Hofmann, Mario ;

Dresselhaus, Gene ;

Saito, Riichiro .

NANO LETTERS, 2010, 10 (03) :751-758

[3] Raman spectrum of graphene and graphene layers [J].

Ferrari, A. C. ;

Meyer, J. C. ;

Scardaci, V. ;

Casiraghi, C. ;

Lazzeri, M. ;

Mauri, F. ;

Piscanec, S. ;

Jiang, D. ;

Novoselov, K. S. ;

Roth, S. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2006, 97 (18)

[4]

Fukuda M., 1999, WILEY MICRO

[5] Field effect in epitaxial graphene on a silicon carbide substrate [J].

Gu, Gong ;

Nie, Shu ;

Feenstra, R. M. ;

Devaty, R. P. ;

Choyke, W. J. ;

Chan, Winston K. ;

Kane, Michael G. .

APPLIED PHYSICS LETTERS, 2007, 90 (25)

[6] PREPARATION OF GRAPHITIC OXIDE [J].

HUMMERS, WS ;

OFFEMAN, RE .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1958, 80 (06) :1339-1339

[7] Large-scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodes [J].

Jo, Gunho ;

Choe, Minhyeok ;

Cho, Chu-Young ;

Kim, Jin Ho ;

Park, Woojin ;

Lee, Sangchul ;

Hong, Woong-Ki ;

Kim, Tae-Wook ;

Park, Seong-Ju ;

Hong, Byung Hee ;

Kahng, Yung Ho ;

Lee, Takhee .

NANOTECHNOLOGY, 2010, 21 (17)

[8] Organic solar cells with solution-processed graphene transparent electrodes [J].

Wu, Junbo ;

Becerril, Hector A. ;

Bao, Zhenan ;

Liu, Zunfeng ;

Chen, Yongsheng ;

Peumans, Peter .

APPLIED PHYSICS LETTERS, 2008, 92 (26)

[9] Electrostatic Force Assisted Exfoliation of Prepatterned Few-Layer Graphenes into Device Sites [J].

Liang, Xiaogan ;

Chang, Allan S. P. ;

Zhang, Yuegang ;

Harteneck, Bruce D. ;

Choo, Hyuck ;

Olynick, Deirdre L. ;

Cabrini, Stefano .

NANO LETTERS, 2009, 9 (01) :467-472

[10] Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN [J].

Nishida, T ;

Saito, H ;

Kobayashi, N .

APPLIED PHYSICS LETTERS, 2001, 79 (06) :711-712

← 1 2 →