Large-scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodes

被引：274

作者：

Jo, Gunho ^{[1
]}

Choe, Minhyeok ^{[1
]}

Cho, Chu-Young ^{[1
]}

Kim, Jin Ho ^{[3
,4
]}

Park, Woojin ^{[1
]}

Lee, Sangchul ^{[2
]}

Hong, Woong-Ki ^{[1
]}

Kim, Tae-Wook ^{[1
]}

Park, Seong-Ju ^{[1
,2
]}

Hong, Byung Hee ^{[3
,4
]}

Kahng, Yung Ho ^{[1
]}

Lee, Takhee ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol, Dept Nanobio Mat & Elect, Kwangju 500712, South Korea

[3] Sungkyunkwan Univ, Dept Chem, Suwon 440746, South Korea

[4] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol, Suwon 440746, South Korea

来源：

NANOTECHNOLOGY | 2010年 / 21卷 / 17期

关键词：

EMISSION;

D O I：

10.1088/0957-4484/21/17/175201

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This work demonstrates a large-scale batch fabrication of GaN light-emitting diodes (LEDs) with patterned multi-layer graphene (MLG) as transparent conducting electrodes. MLG films were synthesized using a chemical vapor deposition (CVD) technique on nickel films and showed typical CVD-synthesized MLG film properties, possessing a sheet resistance of similar to 620 Omega/square with a transparency of more than 85% in the 400-800 nm wavelength range. The MLG was applied as the transparent conducting electrodes of GaN-based blue LEDs, and the light output performance was compared to that of conventional GaN LEDs with indium tin oxide electrodes. Our results present a potential development toward future practical application of graphene electrodes in optoelectronic devices.

引用

页数：6

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