Low-temperature reconstruction pathway to the Si(111)(root 3x root 3)R30 degrees-Ag interface

被引：19

作者：

Carpinelli, JM ^{[1
]}

Weitering, HH ^{[1
]}

机构：

[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.53.12651

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using the spectroscopic capabilities of a scanning tunneling microscope, we identified and investigated a low-temperature reconstruction pathway for forming Si(111)(root 3 x root 3)R30 degrees-Ag from the Si(111)3 x 1-Ag interface. A metastable intermediate phase consisting of one-dimensional atom chains atop the Si(111)3 x 1-Ag reconstruction stabilizes locally. The density of states at the chains indicates a Ag-Si bonding configuration similar to that of the (root 3 x root 3)R30 degrees reconstruction. We propose a mechanism for the (3 x 1) to (root 3 x root 3)R30 degrees phase transformation at low temperature.

引用

页码：12651 / 12654

页数：4

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