Oxygen migration at Pt/HfO2/Pt interface under bias operation

被引：59

作者：

Nagata, T. ^{[1
]}

Haemori, M. ^{[1
]}

Yamashita, Y. ^{[1
,2
]}

Yoshikawa, H. ^{[2
]}

Iwashita, Y. ^{[1
,3
]}

Kobayashi, K. ^{[2
]}

Chikyow, T. ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

[2] Natl Inst Mat Sci, NIMS Beamline Stn SPring 8, Sayo, Hyogo 6795148, Japan

[3] Meiji Univ, Sch Sci & Technol, Tama Ku, Kanagawa 2148571, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 08期

关键词：

electrical conductivity; hafnium compounds; interface states; MIM devices; platinum; X-ray photoelectron spectra; X-RAY PHOTOEMISSION; FILMS; OXIDE; ENTHALPY; MEMORY;

D O I：

10.1063/1.3483756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interfacial electronic states of a Pt/HfO2/Pt diode were investigated by using hard x-ray photoelectron spectroscopy under bias operation. The application of a forward bias to the Pt/HfO2/Pt diode increased the Pt-O bonding peak, providing evidence of Pt electrode oxidization and oxygen vacancy formation around the Pt/HfO2 interface. Under a reverse bias, hafnium was drawn to the Pt electrode, where it took part in Hf-Pt bonding. We achieved the direct observation of oxygen migration at a Pt/HfO2 interface under device operation, which is the key to controlling the electrical properties of metals on oxides.

引用

页数：3

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