Oxygen migration at Pt/HfO2/Pt interface under bias operation

被引：59

作者：

Nagata, T. ^{[1
]}

Haemori, M. ^{[1
]}

Yamashita, Y. ^{[1
,2
]}

Yoshikawa, H. ^{[2
]}

Iwashita, Y. ^{[1
,3
]}

Kobayashi, K. ^{[2
]}

Chikyow, T. ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

[2] Natl Inst Mat Sci, NIMS Beamline Stn SPring 8, Sayo, Hyogo 6795148, Japan

[3] Meiji Univ, Sch Sci & Technol, Tama Ku, Kanagawa 2148571, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 08期

关键词：

electrical conductivity; hafnium compounds; interface states; MIM devices; platinum; X-ray photoelectron spectra; X-RAY PHOTOEMISSION; FILMS; OXIDE; ENTHALPY; MEMORY;

D O I：

10.1063/1.3483756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The interfacial electronic states of a Pt/HfO2/Pt diode were investigated by using hard x-ray photoelectron spectroscopy under bias operation. The application of a forward bias to the Pt/HfO2/Pt diode increased the Pt-O bonding peak, providing evidence of Pt electrode oxidization and oxygen vacancy formation around the Pt/HfO2 interface. Under a reverse bias, hafnium was drawn to the Pt electrode, where it took part in Hf-Pt bonding. We achieved the direct observation of oxygen migration at a Pt/HfO2 interface under device operation, which is the key to controlling the electrical properties of metals on oxides.

引用

页数：3

共 24 条

[21] Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon [J].

Wilk, GD ;

Wallace, RM .

APPLIED PHYSICS LETTERS, 1999, 74 (19) :2854-2856

[22] Bias-voltage Application in Hard X-Ray Photoelectron Spectroscopy for Characterization of Advanced Materials [J].

Yamashita, Yoshiyuki ;

Ohmori, Kenji ;

Ueda, Shigenori ;

Yoshikawa, Hideki ;

Chikyow, Toyohiro ;

Kobayashi, Keisuke .

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2010, 8 :81-83

[23] The mechanism of electroforming of metal oxide memristive switches [J].

Yang, J. Joshua ;

Miao, Feng ;

Pickett, Matthew D. ;

Ohlberg, Douglas A. A. ;

Stewart, Duncan R. ;

Lau, Chun Ning ;

Williams, R. Stanley .

NANOTECHNOLOGY, 2009, 20 (21)

[24] Direct observation of oxygen movement during resistance switching in NiO/Pt film [J].

Yoshida, Chikako ;

Kinoshita, Kentaro ;

Yamasaki, Takahiro ;

Sugiyama, Yoshihiro .

APPLIED PHYSICS LETTERS, 2008, 93 (04)

← 1 2 3 →