Impact of Cu Electrode on Switching Behavior in a Cu/HfO2/Pt Structure and Resultant Cu Ion Diffusion

被引：97

作者：

Haemori, Masamitsu ^{[1
]}

Nagata, Takahiro ^{[1
]}

Chikyow, Toyohiro ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 06期

关键词：

D O I：

10.1143/APEX.2.061401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In a newly proposed switching device using polycrystalline HfO2 thin film with ion diffusion path, we have found that a Cu electrode could contribute to improved switching performance. Current-voltage measurements at room temperature revealed clear resistive switching, not accompanied by a forming process, in our Cu/HfO2/Pt structure. The current step difference from one state to the other one was in the order of 10(3)-10(4), giving a sufficient on/off ratio. Voltage sweep polarity suggested that filamentary Cu paths were formed due to Cu ion diffusion and annihilated at the HfO2/Pt interface at reversed bias. This filament path formation and annihilation was the origin of the switching device performance. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

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