Influence of sapphire nitridation on properties of indium nitride prepared by metalorganic vapor phase epitaxy

被引：23

作者：

Pan, YC ^{[1
]}

Lee, WH

Shu, CK

Lin, HC

Chiang, CI

Chang, H

Lin, DS

Lee, MC

Chen, WK

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

[2] Chung Shan Inst Sci & Technol, Tao Yuan 325, Taiwan

[3] Natl Chiao Tung Univ, Inst Phys, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 2A期

关键词：

InN; MOVPE; nitridation; Hall; Raman;

D O I：

10.1143/JJAP.38.645

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Indium nitride films have been successfully grown on (0001) sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) using TMIn and NH3 as source precursors. Experimental results indicated that pregrowth treatments, such as buffer layer growth, nitridation temperature and nitridation duration have dramatic effects on the growth of the InN films. For films nitridated at 1,000 degrees C for 40 min without any buffer layer growth, we obtained an InN film quality with Hall mobility, carrier concentration and line width of Raman E-2 mode of 270 cm(2)/V.s, 5 x 10(19) cm(-3) and 4.5 cm(-1), respectively, which is among the best quality ever reported for such type of film grown by MOVPE.

引用

页码：645 / 648

页数：4

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