The characteristics of organic light emitting diodes with Al doped zinc oxide grown by atomic layer deposition as a transparent conductive anode

被引：30

作者：

Gong, Su Cheol ^{[1
]}

Jang, Ji Geun ^{[1
]}

Chang, Ho Jung ^{[1
]}

Park, Jin-Seong ^{[2
]}

机构：

[1] Dankook Univ, Dept Elect Engn, Cheonan 330714, Chungnam, South Korea

[2] Dankook Univ, Dept Mat Sci & Engn, Cheonan 330714, Chungnam, South Korea

来源：

SYNTHETIC METALS | 2011年 / 161卷 / 9-10期

关键词：

Al doped ZnO (AZO); Transparent conductive oxide (TCO); Organic light emitting diodes (OLEDs); Atomic layer deposition (ALD); THIN-FILMS; ZNO FILMS; ELECTRODE;

D O I：

10.1016/j.synthmet.2011.02.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Al doped zinc oxide (AZO) films, deposited by atomic layer deposition (ALD) were investigated for applying a transparent conductive oxide (TCO) layer as an anode for organic light emitting diode (OLED) devices. AZO films with a thickness of 100 nm were deposited at various Al atomic ratios ranging from 0 to 5% at a deposition temperature (250 degrees C). The optimum electrical properties: the carrier mobility, the resistivity, and the sheet resistance for the 2% AZO film were found to be 16.2 cm(2) V-1 s(-1), 1.5 x 10(-3) cm(-3), and 217 Omega/sq. respectively. The red OLED devices were fabricated using AZO anodes utilizing the various Al atomic ratios; the electrical and optical characteristics were then investigated. The best luminance, quantum efficiency, and current efficiency were found in the OLED device using the 2% AZO TCO; the results were 16599 cd/m(2), 8.2%, and 7.5 cd/A, respectively. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：823 / 827

页数：5

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