GaAs/Ge/GaAs sublattice reversal epitaxy and its application to nonlinear optical devices

被引：54

作者：

Koh, S

Kondo, T

Shiraki, Y

Ito, R

机构：

[1] Univ Tokyo, RCAST, Meguro Ku, Tokyo 1538904, Japan

[2] Univ Tokyo, Fac Engn, Dept Mat Sci, Bunkyo Ku, Tokyo 1138656, Japan

[3] Meiji Univ, Dept Phys, Tama Ku, Kawasaki, Kanagawa 2148571, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

molecular beam epitaxy; gallium compounds; nonlinear optical materials; semiconducting gallium arsenides; nonlinear optical;

D O I：

10.1016/S0022-0248(01)00660-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have proposed and demonstrated sublattice reversal epitaxy in lattice-matched GaAs/Ge/GaAs (1 0 0) and (1 1 1) systems using molecular beam epitaxy. For growth on (1 0 0) substrates misoriented toward [0 (1) over bar 1], the overgrown GaAs layer had its sublattice reversed, For growth on (1 1 1) substrates, the overgrown GaAs of the (1 1 1) B type was reproducible whether the substrate orientation was (1 1 1)A or (1 1 1)B. Furthermore, sublattice reversal epitaxy has been applied to the fabrication of a periodically domain-inverted AlGaAs QPM waveguide, A preliminary second-harmonic generation demonstration exhibited quasi-phase-matched output at the fundamental wavelength of 1576.1 nm. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：183 / 192

页数：10

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