MODIFICATION OF THE 2ND-ORDER OPTICAL SUSCEPTIBILITY IN ALXGA1-XAS BY ION-BEAM-INDUCED AMORPHIZATION

被引：10

作者：

JANZ, S

BUCHANAN, M

CHATENOUD, F

MCCAFFREY, JP

NORMANDIN, R

AKANO, UG

MITCHELL, IV

机构：

[1] NATL RES COUNCIL CANADA,SOLID STATE OPTOELECTR CONSORTIUM,OTTAWA K1A 0R6,ONTARIO,CANADA

[2] UNIV WESTERN ONTARIO,DEPT PHYS,LONDON N6A 3K7,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 02期

关键词：

D O I：

10.1063/1.112677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical second-harmonic (SH) response of GaAs and Al0.6Ga0.4As bombarded with 1.2-MeV energy As+ ions has been measured for doses ranging from 5x10(12) to 2x10(14) ions cm-2. The measured SH response vanishes at an ion dose of 2x10(14) ions cm-2 as a result of ion induced amorphization. Thermal annealing at 600-degrees-C greatly reduced the damage induced optical absorption, for lambda=1.06 mum light, but had no effect on the SH susceptibility.

引用

页码：216 / 218

页数：3

共 20 条

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