Electrical contacts to ultrananocrystalline diamond

被引：47

作者：

Gerbi, JE

Auciello, O

Birrell, J

Gruen, DM

Alphenaar, BW

Carlisle, JA

机构：

[1] Argonne Natl Lab, Dept Mat Sci, Argonne, IL 60439 USA

[2] Univ Louisville, Dept Elect & Comp Engn, Louisville, KY 40292 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 10期

关键词：

D O I：

10.1063/1.1609043

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The contact behavior of various metals on n-type nitrogen-doped ultrananocrystalline diamond (UNCD) thin films has been investigated. The influences of the following parameters on the current-voltage characteristics of the contacts are presented: (1) electronegativity and work function of various metals, (2) an oxidizing acid surface cleaning step, and (3) oxide formation at the film/contact interface. Near-ideal ohmic contacts are formed in every case, while Schottky barrier contacts prove more elusive. These results counter most work discussed to date on thin diamond films, and are discussed in the context of the unique grain-boundary conductivity mechanism of the nitrogen-doped UNCD. (C) 2003 American Institute of Physics.

引用

页码：2001 / 2003

页数：3

共 12 条

[1]

ABDELMOTALEB IM, COMMUNICATION

[2] Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films [J].

Bhattacharyya, S ;

Auciello, O ;

Birrell, J ;

Carlisle, JA ;

Curtiss, LA ;

Goyette, AN ;

Gruen, DM ;

Krauss, AR ;

Schlueter, J ;

Sumant, A ;

Zapol, P .

APPLIED PHYSICS LETTERS, 2001, 79 (10) :1441-1443

[3] Bonding structure in nitrogen doped ultrananocrystalline diamond [J].

Birrell, J ;

Gerbi, JE ;

Auciello, O ;

Gibson, JM ;

Gruen, DM ;

Carlisle, JA .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (09) :5606-5612

[4] Morphology and electronic structure in nitrogen-doped ultrananocrystalline diamond [J].

Birrell, J ;

Carlisle, JA ;

Auciello, O ;

Gruen, DM ;

Gibson, JM .

APPLIED PHYSICS LETTERS, 2002, 81 (12) :2235-2237

[5] Nanocrystalline diamond films [J].

Gruen, DM .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1999, 29 :211-259

[6] Ultrananocrystalline diamond thin films for MEMS and moving mechanical assembly devices [J].

Krauss, AR ;

Auciello, O ;

Gruen, DM ;

Jayatissa, A ;

Sumant, A ;

Tucek, J ;

Mancini, DC ;

Moldovan, N ;

Erdemir, A ;

Ersoy, D ;

Gardos, MN ;

Busmann, HG ;

Meyer, EM ;

Ding, MQ .

[7] Progress towards high power thin film diamond transistors [J].

Looi, HJ ;

Pang, LYS ;

Whitfield, MD ;

Foord, JS ;

Jackman, RB .

[8] A THERMALLY ACTIVATED SOLID-STATE REACTION PROCESS FOR FABRICATING OHMIC CONTACTS TO SEMICONDUCTING DIAMOND [J].

MOAZED, KL ;

ZEIDLER, JR ;

TAYLOR, MJ .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) :2246-2254

[9] Schottky junction properties of the high conductivity layer of diamond [J].

Takeuchi, D ;

Yamanaka, S ;

Okushi, H .

[10] Ga Ohmic contact for n-type diamond by ion implantation [J].

Teraji, T ;

Koizumi, S ;

Kanda, H .

APPLIED PHYSICS LETTERS, 2000, 76 (10) :1303-1305

← 1 2 →