Effect of Growth Orientation and Diameter on the Elasticity of GaN Nanowires. A Combined in Situ TEM and Atomistic Modeling Investigation

被引：82

作者：

Bernal, Rodrigo A. ^{[1
]}

Agrawal, Ravi ^{[1
]}

Peng, Bei ^{[1
]}

Bertness, Kristine A. ^{[2
]}

Sanford, Norman A. ^{[2
]}

Davydov, Albert V. ^{[3
]}

Espinosa, Horacio D. ^{[1
]}

机构：

[1] Northwestern Univ, Dept Mech Engn, Evanston, IL 60208 USA

[2] NIST, Optoelect Div, Boulder, CO 80305 USA

[3] NIST, Div Met, Gaithersburg, MD 20899 USA

来源：

NANO LETTERS | 2011年 / 11卷 / 02期

基金：

美国国家科学基金会;

关键词：

Gallium nitride nanowires; nanowire elastic modulus; in situ testing; first-principles calculations; molecular dynamics; size effect; surface reconstruction; MATERIAL-TESTING-SYSTEM; MICROSCOPY; DEFECTS; DESIGN;

D O I：

10.1021/nl103450e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We characterized the elastic properties of GaN nanowires grown along different crystallographic orientations. In situ transmission electron microscopy tensile tests were conducted using a MEMS-based nanoscale testing system. Complementary atomistic simulations were performed using density functional theory and molecular dynamics. Our work establishes that elasticity size dependence is limited to nanowires with diameters smaller than 20 nm. For larger diameters, the elastic modulus converges to the bulk values of 300 GPa for c-axis and 267 GPa for a- and m-axis.

引用

页码：548 / 555

页数：8

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