Thermal boundary resistance of copper phthalocyanine-metal interface

被引:44
作者
Jin, Y. [1 ]
Yadav, A. [2 ]
Sun, K. [3 ]
Sun, H. [2 ]
Pipe, K. P. [2 ]
Shtein, M. [1 ]
机构
[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Dept Mech Engn, Ann Arbor, MI 48109 USA
[3] Univ Michigan, Electron Microbeam Anal Lab, Ann Arbor, MI 48109 USA
关键词
TRANSPORT-PROPERTIES; THIN-FILMS; CONDUCTIVITY; CONDUCTANCE;
D O I
10.1063/1.3555449
中图分类号
O59 [应用物理学];
学科分类号
摘要
Systems containing interfaces between dissimilar materials can exhibit lower thermal conductivity than their pure constituents, with important implications for thermal management and thermoelectric energy conversion. However, the heat transfer processes at such interfaces, in particular those between organic and inorganic materials, remain for the most part uncharacterized. We use vacuum thermal evaporation to grow archetypal multilayer thin films of copper phthalocyanine (CuPc) and Ag or Al, and measure their thermal conductivity as a function of interface density. We observe large thermal boundary resistance values (7.8 x 10(-8) m(2) K/W for CuPc/Ag and 2.0 x 10(-8) m(2) K/W for CuPc/Al), attributable to acoustic mismatch, heat carrier mismatch, and weak bonding. c 2011 American Institute of Physics. [doi:10.1063/1.3555449]
引用
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页数:3
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