Interdiffusion in (Pb1-xLax)(ZryTi1-y)1-x/4O3/SrRuO3 multilayer thin films examined by secondary ions mass spectroscopy

The interdiffusion between layers in multilayer thin films, including (Pb0.97La0.03)(Zr0.66Ti0.34)(0.9875) O-3 (PLZT), SrRuO3, Ru, Pt and Si, was examined using secondary ions mass spectroscopy (SIMS). The PLZT thin films deposited on Pt-coated Si-substrate using SrRuO3 as buffer layer possessed ferroelectric properties substantially superior to those grown on Si (or Si3N4) surface. Procoating Ru-layer prior to the deposition of SrRuO3 layer further improved the electrical response of PLZT thin films, that was ascribed to the efficient suppression of Sr- and Ru-outward diffusion into PLZT materials. The optimum properties attained are remanent polarization P-r = 25.6 mu C/cm(2), coercive force E-c = 47.1 kV/cm, relative dielectric constant K = 1, 200 and leakage current < 10(-5) A/cm(2) (under 50 kV/cm).