Growth of (Ga,Mn)As on GaAs(001) and (311)A in a high-mobility MBE system

被引：23

作者：

Reinwald, M ^{[1
]}

Wurstbauer, U ^{[1
]}

Döppe, M ^{[1
]}

Kipferl, W ^{[1
]}

Wagenhuber, K ^{[1
]}

Tranitz, HP ^{[1
]}

Weiss, D ^{[1
]}

Wegscheider, W ^{[1
]}

机构：

[1] Univ Regensburg, Inst Expt & Angew Phys, D-93040 Regensburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期

关键词：

molecular beam epitaxy; GaMnAs; magnetic materials; semiconducting materials;

D O I：

10.1016/j.jcrysgro.2004.12.113

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We demonstrate the possibility to produce both GaAs/AlGaAs heterostructures with high electron mobilities and (Ga,Mn)As by molecular beam epitaxy (MBE) in the same growth chamber. The (Ga,Mn)As samples have been grown on (001) and (311)A GaAs substrates and show state of the art quality. Immediately after (Ga,Mn)As growth, two-dimensional electron systems have been produced which show electron mobilities of up to 5 x 10(6) cm(2)/V s. Photoluminescence measurements reveal that no manganese has been incorporated into these samples. Magnetotransport measurements on (Ga,Mn)As samples show an anomalous Hall effect if the magnetic field is oriented perpendicular to the sample surface and a giant planar Hall effect if the field is parallel to the surface. By rotating the sample in the field, the magnetic anisotropy of the samples can be analyzed. The high quality GaAs/AlGaAs heterostructures that can be produced in the same MBE system provide an excellent basis for future experiments combining high-mobility heterostructures with ferromagnetic semiconductors. © 2005 Elsevier B.V. All rights reserved.

引用

页码：690 / 694

页数：5

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