Magnetotransport properties of (Ga,Mn)As grown on GaAs(411)A substrates

被引：21

作者：

Omiya, T ^{[1
]}

Matsukura, F ^{[1
]}

Shen, A ^{[1
]}

Ohno, Y ^{[1
]}

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Res Inst Elect Commun, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

PHYSICA E | 2001年 / 10卷 / 1-3期

关键词：

(Ga; Mn)As; lattice strain; magnetic anisotropy; magnetotransport properties;

D O I：

10.1016/S1386-9477(01)00083-2

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Properties of ferromagnetic (Ga,Mn)As layers grown epitaxially on a GaAs (4 1 1)A substrate were investigated. X-ray double-crystal diffraction showed the presence of shear strain due to lattice mismatch between substrate and the epitaxial layer. The magnetotransport measurements showed that the easy axis of magnetization was in the (1 0 0) plane. The results indicate that the origin of the magnetic anisotropy is dominated by the lattice strain. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：206 / 209

页数：4

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