Alternative sources of p-type conduction in acceptor-doped ZnO

被引：9

作者：

Limpijumnong, Sukit ^{[1
,2
]}

Gordon, Luke ^{[1
,3
]}

Miao, Maosheng ^{[1
]}

Janotti, Anderson ^{[1
]}

Van de Walle, Chris G. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Suranaree Univ Technol, Sch Phys, Synchrotron Light Res Inst, Nakhon Ratchasima 30000, Thailand

[3] Univ Dublin, Trinity Coll, Dublin, Ireland

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 07期

关键词：

Hall effect; II-VI semiconductors; phosphorus; zinc compounds; MOLECULAR-BEAM EPITAXY; FILMS; SEMICONDUCTORS; DOPANT; ZNSE; GAN;

D O I：

10.1063/1.3481069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report first-principles calculations and interface simulations for Zn3P2, a compound that may form during doping of ZnO with phosphorous. While P is a deep acceptor in ZnO and thus unable to produce p-type conductivity, we show that hole accumulation can occur at ZnO/Zn3P2 interfaces due to the unusual valence-band alignment between the two materials. This provides an explanation for the hole conductivity that has been observed in Hall measurements on phosphorous-doped ZnO. (C) 2010 American Institute of Physics. [doi:10.1063/1.3481069]

引用

页数：3

共 26 条

[1] Nitrogen acceptors in bulk ZnO (000(1)over-bar)) substrates and homoepitaxial ZnO films [J].

Adekore, B. T. ;

Pierce, J. M. ;

Davisb, R. F. ;

Barlage, D. W. ;

Muth, J. F. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (02)

[2] ZnO diode fabricated by excimer-laser doping [J].

Aoki, T ;

Hatanaka, Y ;

Look, DC .

APPLIED PHYSICS LETTERS, 2000, 76 (22) :3257-3258

[3] Formation of p-type ZnO film on InP substrate by phosphor doping [J].

Bang, KH ;

Hwang, DK ;

Park, MC ;

Ko, YD ;

Yun, I ;

Myoung, JM .

APPLIED SURFACE SCIENCE, 2003, 210 (3-4) :177-182

[4] Causes of incorrect carrier-type identification in van der Pauw-Hall measurements [J].

Bierwagen, Oliver ;

Ive, Tommy ;

Van de Walle, Chris G. ;

Speck, James S. .

APPLIED PHYSICS LETTERS, 2008, 93 (24)

[5] ZnO homojunctions grown by cosputtering ZnO and Zn3P2 targets [J].

Hu, Guangxia ;

Gong, Hao ;

Chor, E. F. ;

Wu, Ping .

APPLIED PHYSICS LETTERS, 2006, 89 (02)

[6] Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant [J].

Kim, KK ;

Kim, HS ;

Hwang, DK ;

Lim, JH ;

Park, SJ .

APPLIED PHYSICS LETTERS, 2003, 83 (01) :63-65

[7] Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set [J].

Kresse, G ;

Furthmuller, J .

COMPUTATIONAL MATERIALS SCIENCE, 1996, 6 (01) :15-50

[8] Local p-type conductivity in n-GaN and n-ZnO layers due to inhornogeneous dopant incorporation [J].

Krtschil, A ;

Look, DC ;

Fang, ZQ ;

Dadgar, A ;

Diez, A ;

Krost, A .

PHYSICA B-CONDENSED MATTER, 2006, 376 :703-706

[9] ACCEPTOR DOPING IN ZNSE VERSUS ZNTE [J].

LAKS, DB ;

VAN DE WALLE, CG ;

NEUMARK, GF ;

PANTELIDES, ST .

APPLIED PHYSICS LETTERS, 1993, 63 (10) :1375-1377

[10] Defect properties and p-type doping efficiency in phosphorus-doped ZnO [J].

Lee, WJ ;

Kang, J ;

Chang, KJ .

PHYSICAL REVIEW B, 2006, 73 (02)

← 1 2 3 →