Alternative sources of p-type conduction in acceptor-doped ZnO

被引：9

作者：

Limpijumnong, Sukit ^{[1
,2
]}

Gordon, Luke ^{[1
,3
]}

Miao, Maosheng ^{[1
]}

Janotti, Anderson ^{[1
]}

Van de Walle, Chris G. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Suranaree Univ Technol, Sch Phys, Synchrotron Light Res Inst, Nakhon Ratchasima 30000, Thailand

[3] Univ Dublin, Trinity Coll, Dublin, Ireland

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 07期

关键词：

Hall effect; II-VI semiconductors; phosphorus; zinc compounds; MOLECULAR-BEAM EPITAXY; FILMS; SEMICONDUCTORS; DOPANT; ZNSE; GAN;

D O I：

10.1063/1.3481069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report first-principles calculations and interface simulations for Zn3P2, a compound that may form during doping of ZnO with phosphorous. While P is a deep acceptor in ZnO and thus unable to produce p-type conductivity, we show that hole accumulation can occur at ZnO/Zn3P2 interfaces due to the unusual valence-band alignment between the two materials. This provides an explanation for the hole conductivity that has been observed in Hall measurements on phosphorous-doped ZnO. (C) 2010 American Institute of Physics. [doi:10.1063/1.3481069]

引用

页数：3

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