Ultra-high long-term stability of oxide-TTFTs under current stress

被引：34

作者：

Riedl, T. ^{[1
]}

Goerrn, P. ^{[1
]}

Hoelzer, P. ^{[1
]}

Kowalsky, W. ^{[1
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Hochfrequenztech, D-38092 Braunschweig, Germany

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2007年 / 1卷 / 05期

关键词：

D O I：

10.1002/pssr.200701129

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this letter the stability of transparent thin-film transistors (TTFTs) based on the ZnO-SnO2 (ZTO) material system is investigated. Bottom-gate devices have been subject to electrical stress via a gate-source bias of 10 V and a drain-source bias of 10 V leading to a drain-source current of 188 mu A. In optimized TTFTs with a composition of [Zn]: [Sn] = 36:64 the relative change of the saturated field effect mobility was less than 1% and the threshold voltage shift was about 320 mV after 1000 hours of operation. This extraordinary stability of ZTO TTFTs underlines their suitability as drivers in active matrix OLED displays. (c) 2007 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：175 / 177

页数：3

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