Compositional inhomogeneity of a high-efficiency InxGa1-xN based multiple quantum well ultraviolet emitter studied by three dimensional atom probe

被引：28

作者：

Galtrey, M. J. ^{[1
]}

Oliver, R. A. ^{[1
]}

Kappers, M. J. ^{[1
]}

McAleese, C. ^{[1
]}

Zhu, D. ^{[1
]}

Humphreys, C. J. ^{[1
]}

Clifton, P. H. ^{[2
]}

Larson, D. ^{[2
]}

Cerezo, A. ^{[3
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[2] Imago Sci Instruments, Madison, WI 53711 USA

[3] Univ Oxford, Dept Mat, Oxford OX1 3PH, England

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 04期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2829592

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An InxGa1-xN based multiple quantum well structure emitting in the ultraviolet, which has the highest reported efficiency (67%) at its wavelength (380 nm), was analyzed with the three-dimensional atom probe. The results reveal gross discontinuities and compositional variations within the quantum well layers on a 20-100 nm length scale. In addition, the analysis shows the presence of indium in the AlyGa1-yN barrier layers, albeit at a very low level. By comparing with analogous epilayer samples, we suggest that the quantum well discontinuities we observe may play an important role in improving the efficiency of these structures. (c) 2008 American Institute of Physics.

引用

页数：3

共 11 条

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