Role of gross well-width fluctuations in bright, green-emitting single InGaN/GaN quantum well structures

被引：69

作者：

van der Laak, Nicole K. ^{[1
]}

Oliver, Rachel A. ^{[1
]}

Kappers, Menno J. ^{[1
]}

Humphreys, Colin J. ^{[1
]}

机构：

[1] Univ Cambridge, Cambridge CB2 3QZ, England

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 12期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2715166

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gross well-width fluctuations have been observed by transmission electron microscopy (TEM) in single InGaN/GaN quantum wells (QWs) grown by metal-organic vapor phase epitaxy. Similar thickness variations are observed in commercial, green InGaN/GaN multi-QW light emitting diodes. Atomic force microscopy studies of equivalent epilayers suggest that these fluctuations arise from a network of interlinking InGaN strips, which are found (using TEM) to be indium rich at their centers. Plan-view TEM indicates that 90 +/- 8% of all threading dislocations (TDs) intersect the QW plane between the InGaN strips. Excitons may be localized at the strips' centers, preventing nonradiative recombination at TDs. (c) 2007 American Institute of Physics.

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