Electron-beam-induced strain within InGaN quantum wells: False indium "cluster" detection in the transmission electron microscope

被引：229

作者：

Smeeton, TM ^{[1
]}

Kappers, MJ ^{[1
]}

Barnard, JS ^{[1
]}

Vickers, ME ^{[1
]}

Humphreys, CJ ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 26期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.1636534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN quantum wells have been found to be extremely sensitive to exposure to the electron beam in the transmission electron microscope (TEM). High-resolution TEM images acquired immediately after first irradiating a region of quantum well indicates no gross fluctuations of indium content in the InGaN alloy. During only a brief period of irradiation, inhomogeneous strain is introduced in the material due to electron beam damage. This strain is very similar to that expected from genuine nanometer-scale indium composition fluctuations which suggests there is the possibility of falsely detecting indium-rich "clusters" in a homogeneous quantum well. (C) 2003 American Institute of Physics.

引用

页码：5419 / 5421

页数：3

共 13 条

[1] Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells [J].

Cho, HK ;

Lee, JY ;

Sharma, N ;

Humphreys, CJ ;

Yang, GM ;

Kim, CS ;

Song, JH ;

Yu, PW .

APPLIED PHYSICS LETTERS, 2001, 79 (16) :2594-2596

[2]

Gerthsen D, 2000, PHYS STATUS SOLIDI A, V177, P145, DOI 10.1002/(SICI)1521-396X(200001)177:1<145::AID-PSSA145>3.0.CO

[3]

2-0

[4] Solid phase immiscibility in GaInN [J].

Ho, IH ;

Stringfellow, GB .

APPLIED PHYSICS LETTERS, 1996, 69 (18) :2701-2703

[5] Characterization of MOVPE-grown (Al,In,Ga)N heterostructures by quantitative analytical electron microscopy [J].

Lakner, H ;

Brockt, G ;

Mendorf, C ;

Radefeld, A ;

Scholz, F ;

Harle, V ;

Off, J ;

Sohmer, A .

JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (10) :1103-1108

[6] Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells [J].

Lin, YS ;

Ma, KJ ;

Hsu, C ;

Feng, SW ;

Cheng, YC ;

Liao, CC ;

Yang, CC ;

Chou, CC ;

Lee, CM ;

Chyi, JI .

APPLIED PHYSICS LETTERS, 2000, 77 (19) :2988-2990

[7] Electron-beam-induced damage in wurtzite InN [J].

Mkhoyan, KA ;

Silcox, J .

APPLIED PHYSICS LETTERS, 2003, 82 (06) :859-861

[8]

Nakamura S., 2000, INTRO NITRIDE SEMICO

[9] Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm [J].

Narukawa, Y ;

Kawakami, Y ;

Funato, M ;

Fujita, S ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1997, 70 (08) :981-983

[10] Composition fluctuation in InGaN quantum wells made from molecular beam or metalorganic vapor phase epitaxial layers [J].

Ruterana, P ;

Kret, S ;

Vivet, A ;

Maciejewski, G ;

Dluzewski, P .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (11) :8979-8985

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