A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers

被引：12

作者：

Zhu, A.

Kappers, M. J.

Costa, P. M. F. J.

McAleese, C.

Rayment, F. D. G.

Chabrol, G. R.

Graham, D. M.

Dawson, P.

Thrush, E. J.

Mullins, J. T.

Humphreys, C. J.

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[2] Univ Manchester, Sch Phys & Astron, Manchester M60 1QD, Lancs, England

[3] Thomas Swan Sci Equipment Ltd, Cambridge CB4 5UG, England

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2006年 / 203卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1002/pssa.200565250

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

InGaN multiple quantum well (MQW) structures with AlGaN and AlInGaN barriers were grown on sapphire by metalorganic vapour phase epitaxy (MOVPE). The high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) characterisation results show substantial improvements in the material quality by introducing a small amount of indium into the AlGaN barriers, resulting in improved optical properties, as indicated by low-temperature (6 K) photoluminescence (LT-PL) spectroscopy. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1819 / 1823

页数：5

共 5 条

[1] Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition [J].