Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition

被引：89

作者：

Shu, CK ^{[1
]}

Ou, J ^{[1
]}

Lin, HC ^{[1
]}

Chen, WK ^{[1
]}

Lee, MC ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 05期

关键词：

D O I：

10.1063/1.121933

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition was investigated by using Raman scattering, scanning electron microscopy (SEM), and x-ray and photoluminescence (PL) measurements. In our study, the phonon spectra of films remain sharp without alloy formation after incorporation of small amounts of In atoms. The SEM pictures of the sample surface reveal greatly reduced nanopits indicating better surface flatness that is also supported by the multiple interference effect in the PL signals. More importantly, isoelectronic doping has caused the linewidth at 15 K of the near-band-edge emission of GaN to decrease sharply to 10 meV or less, reflecting improved optical property. (C) 1998 American Institute of Physics.

引用

页码：641 / 643

页数：3

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